Language: English
97873130873622012-01; Hardcover; 23.6 x 16.2 x 1.8 cm; 152 pages
(英文版) [精装]
~ 张亚非 (作者), 陈达 (作者)
市场价: ￥ 68.00
价格: ￥ 51.00 ￥25
出版社: 上海交通大学出版社; 第1版 (2012年12月1日)
外文书名: 精装: 152页
语种： 英文
开本: 16
ISBN: 9787313087362
条形码: 9787313087362
商品尺寸: 商品重量: 422 g
Chapter1 Introduction
1.1 RF Filters in GHz Wireless Applications
1.1.1 The Requirement of RF Filters
1.1.2 Types ofRF Filters
1.2 Bulk Acoustic Wave （BAW） Resonator and Its Development
1.2. BAW Resonator
1.2.2 Micro Electromechanical Systems （MEMS） Applied in BAW
1.3 The Principle and Configurations ofFBAR
1.3.1 The Principle of FBAR
1.3.2 Typical FBAR Configurations
1.3.3 Current Status of FBAR Filters
1.4 The Application of FBAR in Mass Loading Sensors
1.4.1 Acoustic Resonant Mass Sensors
1.4.2 FBAR Mass Loading Sensors
1.5 Overview of the Chapters
References
Chapter2 Propagation of Acoustic Wave in Crystals
2.1 The Equation ofAcoustic Plane Wave
2.1.1 The Equation of Elastic Deformation
2.1.2 Christoffel Equation
2.2 Propagation of Plane Wave in Isotropic Medium
2.3 Propagation of Plane Wave in Anisotropic Medium
2.3.1 Dispersion Relation and Inverse Velocity Face
2.3.2 The Solution of Wave Equation in Cubic Crystal
2.4 Piezoelectrically Active Wave Propagation
2.5 The Plane Wave Propagating in Piezoelectric Hexagonal Crystal
References
Chapter 3 The Theory of FBAR
3.1 The Electric Impedance of the Ideal FBAR
3.1.1 The Analytic Expression of the Electric Impedance
3.1.2 The Resonance of FBAR
3.2 The Electric Impedance of the Compound FBAR
3.2.1 The Definition of the Acoustic Impedance
3.2.2 The Boundary Condition of Compound FBAR
3.3 The Loss and Performances of FBAR
3.4 The Equivalent Electromechanical Mode of FBAR
3.4.1 The Equivalent Mode of the Layers
3.4.2 The Universal Equivalent Mode of FBAR
3.4.3 The Equivalent Circuit Nears the Resonance of FBAR
3.5 The Calculated Influence of the Materials and Structure on the Device Performance
3.5.1 The Effects of the Electrode
3.5.2 The Influences of' Supporting Layer and the Residue Silicon Layer
References
Chapter 4 The Deposition and Etching of AIN Film
4.1 Deposition of AIN Film by RF Magnetron Sputtering
4.1.1 Introduction
4.1.2 Experimental
4.1.3 The Effect of RF Power on the Film Texture
4.1.4 The Influence of Ambit Pressure and the Ratio of N2/Ar on the Film Structure
4.1.5 The Influence of the Substrate Temperature on the Film Texture
4.1.6 The Microstructure and Chemical Component
4.2 The Scructural Characreristics of AIN Films Deposited on Diff'erent Eleccrodes
4.3 Dry Etching of AIN Films Using Fluoride Plasma
4.3.1 The Dry Etching of AIN Films
4.3.2 Experimental
4.3.3 The Etching Rate
4.3.4 The Morphologies
4.3.5 The Etching Mechanism.
4.4 The Wet Etching of AIN
4.4.1 The Wet Etching Process
4.4.2 Experimental
4.4.3 The Influence of the Film Texture
4.4.4 The Effects of Crystal Quality
References
……
Chapter 5 The FBAR with Membrane Structure
Chapter 6 Solidly Mounted Acoustic Resonator
Chapter 7 The Applications of FBAR in RF Filters
Chapter 8 The FBAR Excited by Lateral Filed
Chapter 9 High Sensitive Sensors Based on FBAR
Index
